Last January while in Las Vegas for CES, I had a
chance to talk to finally meet and talk with Team Kingston. Not only were they
busy with a Kingston Suite talking any and every thing hardware, they were also
present at Pepcom and Show Stoppers. Kingston has one simple goal: produce the
best available memory products. One of those products, specifically, is the
Hyper X DDR3 memory line.
DDR3 memory has never looked so good till the release of the latest blistering
fast Intel i7 Processor series. It's been obvious for some time that we haven't
been properly tapped in to DDR2 or DDR3 memory based on the current memory
controllers on Intel motherboards. However, we've already seen some impressive
memory bandwidth performance from some Patriot Memory 1600 MHz memory.
All that bandwidth is a valuable resource for the i7's number crunching ability.
If a larger number of future applications and games are coded properly, they
will also be able to benefit as well. For what ever relevant reasons, we simply
don't have them now and it could sill be a year before something tangible
arrives. It still doesn't diminish the ability of the i7 to properly take
advantage of other applications like audio and video editing. The more bandwidth
available, the faster the processor can cut down encoding and decoding times.
What could be faster than the current high end average 1600 MHz Triple Channel
DDR3 memory? How about Kingston 2000 MHz Triple Channel DDR3 memory! It's mean,
not green, low voltage, and
HyperX!
Features & Specifications:
KHX16000D3K3/3GX
HYPERX
3GB (1GB 128M x 64-Bit x 3 pcs.) PC3-16000
Triple-Channel CL9 240-Pin DIMM Kit
DESCRIPTION: Kingston's KHX16000D3K3/3GX is a triple-channel kit of three 128M x
64-bit 1GB (1024MB) DDR3-2000 CL9 SDRAM (Synchronous DRAM) memory modules, based
on eight 128M x 8-bit DDR3 FBGA components per module. Each module kit supports
Intel® XMP (Extreme Memory Profiles). Each module kit has been tested to run at
DDR3-2000MHz at a latency timing of 9-9-9 at 1.65V. The SPDs are programmed to
JEDEC standard latency DDR3-1333Mhz timing of 9-9-9 at 1.5V. Each 240-pin DIMM
uses gold contact fingers and requires +1.5V. The JEDEC standard electrical and
mechanical specifications are as follows:
Programmable CAS Write Latency(CWL) =
9(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any
limit, sequential with starting address “000” only), 4 with tCCD = 4 which
does not allow seamless read or write [either on the fly using A12 or MRS]