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Kingston HyperX PC3-16000 3GB Tri-Channel Memory Review
Date Published:
02-26-2009
Written By:
Temujin
Edited By:
Diceman
Provided By:
Kingston
Where to Buy:
Newegg
Discuss Article:
VH Forum link
Pages: 1 2 3

Introduction:


Kingston HyperX 2000 MHz 3GB Triple Channel Memory

Last January while in Las Vegas for CES, I had a chance to talk to finally meet and talk with Team Kingston. Not only were they busy with a Kingston Suite talking any and every thing hardware, they were also present at Pepcom and Show Stoppers. Kingston has one simple goal: produce the best available memory products. One of those products, specifically, is the Hyper X DDR3 memory line.

DDR3 memory has never looked so good till the release of the latest blistering fast Intel i7 Processor series. It's been obvious for some time that we haven't been properly tapped in to DDR2 or DDR3 memory based on the current memory controllers on Intel motherboards. However, we've already seen some impressive memory bandwidth performance from some Patriot Memory 1600 MHz memory.

All that bandwidth is a valuable resource for the i7's number crunching ability. If a larger number of future applications and games are coded properly, they will also be able to benefit as well. For what ever relevant reasons, we simply don't have them now and it could sill be a year before something tangible arrives. It still doesn't diminish the ability of the i7 to properly take advantage of other applications like audio and video editing. The more bandwidth available, the faster the processor can cut down encoding and decoding times.

What could be faster than the current high end average 1600 MHz Triple Channel DDR3 memory? How about Kingston 2000 MHz Triple Channel DDR3 memory! It's mean, not green, low voltage, and HyperX!

Features & Specifications:
 

KHX16000D3K3/3GX HYPERX
3GB (1GB 128M x 64-Bit x 3 pcs.) PC3-16000
Triple-Channel CL9 240-Pin DIMM Kit


DESCRIPTION: Kingston's KHX16000D3K3/3GX is a triple-channel kit of three 128M x 64-bit 1GB (1024MB) DDR3-2000 CL9 SDRAM (Synchronous DRAM) memory modules, based on eight 128M x 8-bit DDR3 FBGA components per module. Each module kit supports Intel® XMP (Extreme Memory Profiles). Each module kit has been tested to run at DDR3-2000MHz at a latency timing of 9-9-9 at 1.65V. The SPDs are programmed to JEDEC standard latency DDR3-1333Mhz timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V. The JEDEC standard electrical and mechanical specifications are as follows:

FEATURES:

  • JEDEC standard 1.5V ± 0.075V Power Supply

  • VDDQ = 1.5V ± 0.075V

  • 667MHz fCK for 1333Mb/sec/pin

  • 8 independent internal bank

  • Programmable CAS Latency: 6,7,8,9

  • Posted CAS

  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

  • Programmable CAS Write Latency(CWL) = 9(DDR3-1333)

  • 8-bit pre-fetch

  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]

  • Bi-directional Differential Data Strobe

  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

  • On Die Termination using ODT pin

  • Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C

  • Asynchronous Reset

  • PCB : Height 1.180” (30.00mm), single sided component

PERFORMANCE:

  • CL(IDD) 9 cycles

  • Row Cycle Time (tRCmin) 49.5ns (min.)

  • Refresh to Active/Refresh Command Time (tRFCmin) 110ns

  • Row Active Time (tRASmin) 36ns (min.)

  • Power 1.296 W (operating per module)

  • UL Rating 94 V - 0

  • Operating Temperature 0 C to 85 C

  • Storage Temperature -55 C to +100 C

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